Nisshinbo's Absorptive High Isolation SPDT Switch
Tokyo, Japan, September 26th, 2024 — Nisshinbo Micro Devices, a leader in innovative electronic solutions, proudly announces the launch of the NT1819 Absorptive High Isolation SPDT Switch. This compact switch is engineered to meet the demands of modern 5G cellular infrastructure and other wireless communication applications, offering superior isolation and low insertion loss across a wide frequency range.
5G base stations have many antennas, an SPDT switch allows selecting between two antennas or different signal paths. The "absorptive" aspect of the switch means that when a port is not being used, it is terminated into a load (usually 50 ohms). This prevents the reflection of RF signals back into the system, which can cause interference or signal degradation. The NT1819 provides high isolation between RF terminals of 60 dB at 3.85 GHz and 50 dB at 7.125 GHz. This feature is crucial for next-generation communication networks, where interference must be minimized to maintain signal integrity.
The switch operates over a wide frequency range from 0.2 to 7.125 GHz, supporting flexibility in design and deployment for various wireless standards. The NT1819 operates at 3.3 V with a typical current consumption of just 200 µA making it power-efficient. It is also resilience in harsh operating environments in a broad temperature range from -40 °C to +105 °C.
With its small 3.0 × 3.0 mm QFN3030-16-NA package, designed to save space on PCBs, making it ideal for base transceiver stations in small and macro cell environments, as well as other advanced wireless communication systems. The device has an MSL1 rating, components in this category have the lowest sensitivity to moisture and can typically be exposed to ambient air without special precautions. The NT1819 is available for purchase now; for more detailed product specifications and purchasing information, please visit our official website and refer to our list of qualified local and online distribution partners.
NT1819 Specifications:
- Operation voltage: 3.3 V Typ. (2.5 to 5.0 V)
- Low control voltage: 1.8 V Typ.
- Low insertion loss: 0.70/0.80/0.85/0.90/1.2 dB Typ. @ 0.7/3.85/4.7/6.0/7.125 GHz
- High isolation:
- 70/62/60/55/51 dB Typ. @ 0.7/3.85/4.7/6.0/7.125 GHz, PC-P1/P2
- 70/61/60/58/55 dB Typ. @ 0.7/3.85/4.7/6.0/7.125 GHz, P1-P2
- High linearity: P-0.1dB = +31 dBm Typ.
- Switching time: 250 ns Typ.
- Frequency range: 0.2 to 7.125 GHz
- Operation current: 200 µA Typ.
- No DC blocking capacitor requirement unless external DC bias
- RoHS compliant, Halogen free, MSL1
- Package NT1819NA: QFN3030-16-NA (3.0 × 3.0 mm Typ.)
- Datasheet: Consumer version
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About Nisshinbo Micro Devices Inc.:
Established in January 2022, Nisshinbo Micro Devices Inc. is a merger of the former companies Ricoh Electronic Devices Co, Ltd., and New Japan Radio Co, Ltd, both members of the Nisshinbo Group.
The history of the two companies goes back to 1959, resulting in more than 60 years of experience in the electronics industry. Today, it is one of the leading global suppliers of advanced analogue products. Its portfolio offers a comprehensive range of ICs for Power Management, Supervisory, Operational Amplifiers, Battery Management, RF, Audio & Video, Optoelectronic devices, Motor drivers to name a few. These products enable electronics engineers to design advanced applications for consumer, industrial and automotive markets. The company is headquartered in Tokyo, Japan, and has development, sales, and manufacturing facilities across the country. In addition, it has regional sales and support offices in North America, Europe, and Asia.